专为具有高性能应用的深亚微米基本存储器而设计

T. Powell, Wu-Tung Cheng, Joseph Rayhawk, Omer Samman, Paul Policke, S. Lai
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引用次数: 29

摘要

今天的ASIC设计在面积和实例数量方面都包含更多的内存。几何形状的收缩对记忆的影响更大,因为它们的布局紧凑。这两种趋势对内存BIST要求提出了更高的要求。高速测试和自定义测试算法对于确保整体产品质量变得至关重要。对目前工作在10到800 MHz范围内的存储器进行高速测试可能是一个挑战。对内存BIST的另一个要求是确定缺陷的位置,以便可以诊断原因,或用冗余细胞修复。讨论了满足这些困难需求的工具和方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Bist for deep submicron asic memories with high performance application
Today’s ASIC designs consist of more memory in terms of both area and number of instances. The shrinking of geometries has an even greater effect upon memories due to their tight layouts. These two trends are putting much greater demands upon memory BIST requirements. At-speed testing and custom test algorithms are becoming essential for insuring overall product quality. At-speed testing on memories that now operate in the 10 to 800 MHz range can be a challenge. Another demand upon memory BIST is determining the location of defects so that the cause can be diagnosed, or repaired with redundant cells. A tool and methodology that meets these difficult requirements is discussed.
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