{"title":"一个400mbps的辐射强化设计LVDS兼容的驱动器和接收器","authors":"G. A. Graceffa, U. Gatti, C. Calligaro","doi":"10.1109/ICECS.2016.7841144","DOIUrl":null,"url":null,"abstract":"A Radiation Hardened By Design (RHBD) LVDS driver and receiver are designed and simulated in a standard 150 nm CMOS technology. The driver and receiver can reach data rates up to 400 Mbps, with respective power consumptions of 15 mW and 12.5 mW from a single 3.3 V power supply. The driver makes use of a standard H-bridge topology, while the receiver consists of the cascade of two stages, a preamplifier and a positive feedback comparator. RHBD is implemented using ELT transistors for Total Ionizing Dose (TID) effects mitigation up to 300 krad and guard-rings to minimize the probability of a Single Event Latchup (SEL). The final test chip contains two drivers and two receivers, with their relative bandgap circuitries, and it has an overall area of 1.913 mm2. Post layout simulation results show complete compatibility of the driver and the receiver with the LVDS standard.","PeriodicalId":205556,"journal":{"name":"2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A 400 Mbps radiation hardened by design LVDS compliant driver and receiver\",\"authors\":\"G. A. Graceffa, U. Gatti, C. Calligaro\",\"doi\":\"10.1109/ICECS.2016.7841144\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A Radiation Hardened By Design (RHBD) LVDS driver and receiver are designed and simulated in a standard 150 nm CMOS technology. The driver and receiver can reach data rates up to 400 Mbps, with respective power consumptions of 15 mW and 12.5 mW from a single 3.3 V power supply. The driver makes use of a standard H-bridge topology, while the receiver consists of the cascade of two stages, a preamplifier and a positive feedback comparator. RHBD is implemented using ELT transistors for Total Ionizing Dose (TID) effects mitigation up to 300 krad and guard-rings to minimize the probability of a Single Event Latchup (SEL). The final test chip contains two drivers and two receivers, with their relative bandgap circuitries, and it has an overall area of 1.913 mm2. Post layout simulation results show complete compatibility of the driver and the receiver with the LVDS standard.\",\"PeriodicalId\":205556,\"journal\":{\"name\":\"2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECS.2016.7841144\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2016.7841144","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 400 Mbps radiation hardened by design LVDS compliant driver and receiver
A Radiation Hardened By Design (RHBD) LVDS driver and receiver are designed and simulated in a standard 150 nm CMOS technology. The driver and receiver can reach data rates up to 400 Mbps, with respective power consumptions of 15 mW and 12.5 mW from a single 3.3 V power supply. The driver makes use of a standard H-bridge topology, while the receiver consists of the cascade of two stages, a preamplifier and a positive feedback comparator. RHBD is implemented using ELT transistors for Total Ionizing Dose (TID) effects mitigation up to 300 krad and guard-rings to minimize the probability of a Single Event Latchup (SEL). The final test chip contains two drivers and two receivers, with their relative bandgap circuitries, and it has an overall area of 1.913 mm2. Post layout simulation results show complete compatibility of the driver and the receiver with the LVDS standard.