一个400mbps的辐射强化设计LVDS兼容的驱动器和接收器

G. A. Graceffa, U. Gatti, C. Calligaro
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引用次数: 5

摘要

采用标准的150nm CMOS技术,设计并仿真了一种辐射硬化(RHBD) LVDS驱动器和接收器。驱动器和接收器的数据速率最高可达400mbps,单个3.3 V电源的功耗分别为15mw和12.5 mW。驱动器使用标准的h桥拓扑,而接收器由两级级联、前置放大器和正反馈比较器组成。RHBD是使用ELT晶体管来实现的,用于减轻高达300克拉的总电离剂量(TID)效应,并使用保护环来最小化单事件闭锁(SEL)的概率。最后的测试芯片包含两个驱动器和两个接收器,以及它们的相关带隙电路,其总面积为1.913 mm2。后布局仿真结果表明,驱动器和接收器完全兼容LVDS标准。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 400 Mbps radiation hardened by design LVDS compliant driver and receiver
A Radiation Hardened By Design (RHBD) LVDS driver and receiver are designed and simulated in a standard 150 nm CMOS technology. The driver and receiver can reach data rates up to 400 Mbps, with respective power consumptions of 15 mW and 12.5 mW from a single 3.3 V power supply. The driver makes use of a standard H-bridge topology, while the receiver consists of the cascade of two stages, a preamplifier and a positive feedback comparator. RHBD is implemented using ELT transistors for Total Ionizing Dose (TID) effects mitigation up to 300 krad and guard-rings to minimize the probability of a Single Event Latchup (SEL). The final test chip contains two drivers and two receivers, with their relative bandgap circuitries, and it has an overall area of 1.913 mm2. Post layout simulation results show complete compatibility of the driver and the receiver with the LVDS standard.
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