埋沟道mosfet低频噪声特性的理论模型

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2017-10-01 DOI:10.1109/S3S.2017.8309247

Y. Omura, Shingo Sato

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引用次数: 2

摘要

本文提出了埋道SOI mosfet在亚阈值偏置范围内低频噪声行为的理论模型。该模型表明，靠近SOI层上表面的界面陷阱对埋藏通道的电流波动有很强的调节作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Theoretical models for low-frequency noise behaviors of buried-channel MOSFETs

This paper proposes theoretical models for the low-frequency noise behaviors of buried-channel SOI MOSFETs in the subthreshold bias range. The model suggests that the interface traps near the top surface of the SOI layer strongly modulate the current fluctuation of the buried channel.

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来源期刊

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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