层间介质CMP的有效减浆方法

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI:10.1109/ISSM.2000.993637

K. Ishimoto

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引用次数: 0

摘要

近年来，化学机械抛光(CMP)已成为半导体制造过程中的常规工艺。然而，CMP工艺的一个问题是浆料消耗非常大。一些试验旨在减少浆料消耗。我们的研究表明，在ILD CMP中，仅在抛光开始时需要浆液，并且在抛光中点之后，我们可以不使用浆液进行平面化。本文介绍了一种层间介质CMP中减少浆料的方法，并预测将该方法应用于我们的ILD CMP工艺可以减少约50%的废浆料。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The effective method of reducing slurry for interlayer dielectric CMP

Recently chemical mechanical polishing (CMP) became a routine process in semiconductor manufacturing process. However one problem is that the slurry consumption in CMP process is very large. Some experiments are aimed at reducing slurry consumption. Our research showed that the slurry was needed only at the start of polishing in ILD CMP and that we could planarize without slurry after the midpoint of polishing. This paper describes a method of reducing slurry for interlayer dielectric CMP and we predict that the application of this method to our ILD CMP process could reduce waste slurry by about 50%.

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Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)

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