TiN覆盖层对ALD - TaCN金属栅/高k MOSFET特性的影响

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI:10.1109/DRC.2005.1553130

Z.B. Zhang, S.C. Song, K. Choi, J. H. Sim, P. Majhi, B. Lee

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引用次数: 3

摘要

本文介绍了一种简单的方法，通过添加MOCVD TiN覆盖层，可以将HfO2上的ALD TaCN的工作函数从4.47eV调整到4.77eV。本文还讨论了TaCN和TiN/TaCN (TiN覆盖层的TaCN)金属栅/高k mosfet的器件特性，并提出了将双金属栅/高k CMOS集成到FD-FET技术中的可制造工艺

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effects of TiN overlay on ALD TaCN metal gate/high-k MOSFET characteristics

This paper describes a simple process that can tune the work function of ALD TaCN on HfO2 from 4.47eV to 4.77eV by adding a MOCVD TiN overlayer. It also discusses the device characteristics of TaCN and TiN/TaCN (TaCN with a TiN overlayer) metal gate/high-k MOSFETs and presents a manufacturable process for integrating the dual metal gate/high-k CMOS in FD-FET technology

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来源期刊

63rd Device Research Conference Digest, 2005. DRC '05.

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