Full-wave electromagnetic modeling of sub-millimeter wave HEMT parasitics

We present a new distributed parasitic equivalent circuit model to accurately reproduce the frequency response of electromagnetic field couplings within the structure of submillimeter-wave high electron mobility transistors in the millimeter-wave and terahertz bands. To construct the proposed circuit model, we develop a multi-step parameter extraction algorithm, and demonstrate its accuracy through comprehensive comparisons between full-wave simulated, measured and modeled frequency responses of the presented test patterns up to 750 GHz.