{"title":"用于成像应用的w波段SiGe 1.5V LNA","authors":"J. May, G. Rebeiz","doi":"10.1109/RFIC.2008.4561427","DOIUrl":null,"url":null,"abstract":"This paper presents a 4-stage SiGe W-band amplifier for imaging applications designed in a 200 GHz ft SiGe BiCMOS process (IBM 8HP). The amplifier exhibits a gain of 19 dB at 85-89 GHz, a 3-dB bandwidth of 17 GHz, a NF of 8-10 dB over the measurement band, and consumes only 25 mW of DC power. The amplifier is very small (0.1 mm2 without pads), making it ideal for 8 or 16-element imaging arrays on a single chip. To our knowledge, this is the first demonstration of a high-gain, high-bandwidth W-band amplifier using SiGe technology.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":"{\"title\":\"A W-band SiGe 1.5V LNA for imaging applications\",\"authors\":\"J. May, G. Rebeiz\",\"doi\":\"10.1109/RFIC.2008.4561427\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 4-stage SiGe W-band amplifier for imaging applications designed in a 200 GHz ft SiGe BiCMOS process (IBM 8HP). The amplifier exhibits a gain of 19 dB at 85-89 GHz, a 3-dB bandwidth of 17 GHz, a NF of 8-10 dB over the measurement band, and consumes only 25 mW of DC power. The amplifier is very small (0.1 mm2 without pads), making it ideal for 8 or 16-element imaging arrays on a single chip. To our knowledge, this is the first demonstration of a high-gain, high-bandwidth W-band amplifier using SiGe technology.\",\"PeriodicalId\":253375,\"journal\":{\"name\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"26\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2008.4561427\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2008.4561427","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents a 4-stage SiGe W-band amplifier for imaging applications designed in a 200 GHz ft SiGe BiCMOS process (IBM 8HP). The amplifier exhibits a gain of 19 dB at 85-89 GHz, a 3-dB bandwidth of 17 GHz, a NF of 8-10 dB over the measurement band, and consumes only 25 mW of DC power. The amplifier is very small (0.1 mm2 without pads), making it ideal for 8 or 16-element imaging arrays on a single chip. To our knowledge, this is the first demonstration of a high-gain, high-bandwidth W-band amplifier using SiGe technology.
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