包含空间电流不稳定模式的Si-Ge BiCMOS ESD结构工作模拟

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI:10.1109/MIEL.2002.1003364

Vladislav Vashchenko, Peter J. Hopper

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引用次数: 7

摘要

提出了一种二维模拟方法，该方法考虑了ESD操作过程中电热不稳定性的三维影响。该方法用于对ESD保护结构和电路的安全运行机制进行物理评估。本文首次对简化的回吸式n-MOS器件进行了ESD应力诱导热点形成的三维模拟。

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Simulation of Si-Ge BiCMOS ESD structures operation including spatial current instability mode

A 2D simulation approach that takes into account the 3D effects of electro-thermal instability during ESD operation, has been presented. The method is used to provide physical evaluation of a safe operation regime of ESD protection structures and circuits. First results of ESD stress induced hot spot formation using 3D simulation have been presented for the case of a simplified snapback n-MOS device.

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2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)

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