Investigation of prototype SiC power module structure for low inductance and high heat operation

This paper deal with structure for low inductance and high heat operation of silicon carbide (SiC) power module, which attracts attention in terms of high withstand voltage, high efficiency and high heat operation in recent years. First, the parasitic inductance of the power module of two types of structure; a conventional structure which forms the current path in a planar manner and a structure formed three-dimensionally is investigated using electromagnetic field analysis. In addition, thermal resistance of two types of power modules are experimentally evaluated from heat radiation performance. Experimental and simulated results reveals that the three-dimensionally formed power module is superior in the current path, resulting in lower parasitic inductance as well as smaller switching loss. Moreover, on state resistance and leakage current are evaluated at the junction temperature of 250 °C and the problems of power module package under high temperature environment is also investigated.