S. Z. Rahaman, S. Maikap, Hsien-Chin Chiu, C. Lin, T. Wu, Y. Chen, P. Tzeng, Frederick T. Chen, M. Kao, Ming-Jinn Tsai
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Low Power Operation of Resistive Switching Memory Device Using Novel W/Ge0.4Se0.6/Cu/Al Structure
Bipolar resistive switching memory device with a low power operation (200μA/1.3V) in a W/Ge0.4Se0.6/Cu/Al structure has been investigated. A stronger Cu chain formation can be observed by monitoring both the erase voltage and current. The low resistance state (RLow) decreases with increasing the programming current from 1nA to 500μA, which can be useful for multi-level of data storage. This resistive memory device has a large threshold voltage of ~0.5V, good resistance ratio (RHigh/RLow) of 1.6x10 2 , good endurance of >1.5x10 5 cycles, and excellent retention (>11 hours) with a resistance ratio of > 1.3×10 2 at 150 o C can be used in future nonvolatile memories.
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