2V有机互补逆变器

2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers Pub Date : 2006-09-18 DOI:10.1109/ISSCC.2006.1696152

S. De Vusser, S. Steudel, K. Myny, Jan Genoe, P. Heremans

{"title":"2V有机互补逆变器","authors":"S. De Vusser, S. Steudel, K. Myny, Jan Genoe, P. Heremans","doi":"10.1109/ISSCC.2006.1696152","DOIUrl":null,"url":null,"abstract":"A complementary organic thin-film transistor technology uses pentacene and F16CuPc as the p-type and n-type materials, respectively. The semiconductors are patterned by vacuum deposition through an integrated shadow mask, while tilting the substrate. Organic complementary inverters are realized that display an almost ideal inverter curve at a supply voltage of 2V, showing a gain of 14 and a noise margin of 0.65V","PeriodicalId":166617,"journal":{"name":"2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"A 2V Organic Complementary Inverter\",\"authors\":\"S. De Vusser, S. Steudel, K. Myny, Jan Genoe, P. Heremans\",\"doi\":\"10.1109/ISSCC.2006.1696152\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A complementary organic thin-film transistor technology uses pentacene and F16CuPc as the p-type and n-type materials, respectively. The semiconductors are patterned by vacuum deposition through an integrated shadow mask, while tilting the substrate. Organic complementary inverters are realized that display an almost ideal inverter curve at a supply voltage of 2V, showing a gain of 14 and a noise margin of 0.65V\",\"PeriodicalId\":166617,\"journal\":{\"name\":\"2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2006.1696152\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2006.1696152","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

摘要

互补的有机薄膜晶体管技术分别使用并五苯和F16CuPc作为p型和n型材料。在倾斜衬底的同时，通过集成阴影掩膜真空沉积半导体图案化。实现了有机互补逆变器在电源电压为2V时显示出几乎理想的逆变器曲线，增益为14，噪声裕度为0.65V

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A 2V Organic Complementary Inverter

A complementary organic thin-film transistor technology uses pentacene and F16CuPc as the p-type and n-type materials, respectively. The semiconductors are patterned by vacuum deposition through an integrated shadow mask, while tilting the substrate. Organic complementary inverters are realized that display an almost ideal inverter curve at a supply voltage of 2V, showing a gain of 14 and a noise margin of 0.65V

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers

自引率

0.00%

发文量