增强pmos触发的PMLSCR具有强大的EOS免疫能力

Shih-Yu Wang, Yong-Han He, Chieh-Wei He, Hao-Chan Huang, Yao-Wen Chang, T. Lu, Kuang-Chao Chen, Chih-Yuan Lu
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引用次数: 1

摘要

提出了一种增强型pmos触发PMLSCR。在PNP和NPN BJT同时触发的情况下,可以进一步提高电压超调和导通均匀性。从TCAD仿真可以看出,在触发电流的帮助下,可控硅的导通路径变深,回吸电压降低。通过设计的功率顺序,获得了考虑自热效应的可控硅器件的保持电压和保持电流。因此可以保证健壮的EOS免疫能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Enhanced PMOS-triggered PMLSCR with robust EOS immunity
An enhanced PMOS-triggered PMLSCR is proposed. Under the condition that both PNP and NPN BJT's are triggered simultaneously, voltage overshoot and turn-on uniformity can be further improved. From TCAD simulation, it is clear that with the help of trigger current, conduction path of SCR goes deeper and snapback voltage is reduced. By the designed power sequence, holding voltage and current of SCR devices considering self-heating effect are attained. Robust EOS immunity can be assured accordingly.
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