功率半导体超高温测量装置，温度超过500°C

2015 International Semiconductor Conference (CAS) Pub Date : 2015-12-17 DOI:10.1109/SMICND.2015.7355191

Christian Unger, M. Mocanu, Michael Ebli, M. Pfost

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引用次数: 6

摘要

本文提出了一种适用于功率半导体器件在超过500°C的高温条件下表征的测量装置和组装技术。它的一个重要应用是宽禁带半导体的实验研究。测量结果显示为1200V SiC MOSFET和650V耗尽模式GaN HEMT。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A setup for very high temperature measurements of power semiconductors exceeding 500 °C

This paper presents a measurement setup and an assembly technique suitable for characterization of power semiconductor devices under very high temperature conditions exceeding 500 °C. An important application of this is the experimental investigation of wide bandgap semiconductors. Measurement results are shown for a 1200V SiC MOSFET and a 650V depletion mode GaN HEMT.

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来源期刊

2015 International Semiconductor Conference (CAS)

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