cvd -石墨烯fet的电学特性

2011 NORCHIP Pub Date : 2011-11-01 DOI:10.1109/NORCHP.2011.6126720

Johanna Anteroinen, Wonjae Kim, K. Stadius, J. Riikonen, H. Lipsanen, J. Ryynänen

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引用次数: 1

摘要

石墨烯场效应晶体管(GFET)于2004年首次提出，由于该材料具有许多前景，迅速成为一个有趣的电子研究课题。我们使用ic兼容的化学气相沉积(CVD)工艺制备了gfet。本文介绍了用CVD生长石墨烯层制备石墨烯场效应晶体管的实验结果。此外，本文还简要回顾了gfet和器件物理的最新进展。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electrical properties of CVD-graphene FETs

Graphene field-effect transistors (GFET) were first presented in 2004, and quickly became an interesting electronics research topic due to the many promises that the material holds. We have fabricated GFETs using an IC-compatible chemical vapour deposition (CVD) process. This paper presents experimental results of graphene field-effect transistors with CVD grown graphene layer. In addition, this paper reviews briefly the state-of-the-art GFETs and device physics.

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2011 NORCHIP

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