3.3kV双面双栅igbt暂态分析

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.239986

K. Hobart, F. Kub, M. Ancona, J. Neilson, P. Waind

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引用次数: 10

摘要

介绍了双侧双栅igbt (digbt)的瞬态特性。与传统的igbt相比，带n缓冲层和不带n缓冲层的器件。与3.3 kV igbt相比，两种DIGBT设计都具有改进的E/sub OFF/和V/sub CE,ON/。与传统的igbt相比，有n缓冲层和没有n缓冲层的器件的V/sub CE和ON/分别提高了35%和46%。关断损耗改善近80%，在1800v下关闭50a时，E/sub OFF/低至9mj。

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Transient analysis of 3.3kV double-side double-gate IGBTs

The transient behavior of double-side, double-gate IGBTs (DIGBTs) is presented. Devices fabricated with and without n-buffer layers are compared to conventional IGBTs. Both DIGBT designs show improved E/sub OFF/ and V/sub CE,ON/ compared with the 3.3 kV IGBTs. The improvement in V/sub CE,ON/ is 35% and 46% for devices with and without n-buffer layers, respectively, compared to conventional IGBTs. Improvement in turn-off loss is nearly 80%, achieving E/sub OFF/ as low as 9 mJ turning off 50 A at 1800 V.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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