p/SI-InP: Fe/n和p/n /SI-InP/Fe/n构型的I-V行为与电流阻断SI-InP:Fe埋地异质结构激光器中泄漏电流的关系

S. Lourdudoss, O. Kjebon, N. Nordell, J. Borglind
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引用次数: 3

摘要

研究并比较了p/Sl/n和p/n/SI/n两种构型的IN行为。利用这些结果提取了两种以SI-InP:Fe作为电流阻挡层的埋入异质结构激光器的漏电流贡献。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
I-V behaviour of p/SI-InP: Fe/n and p/n /SI-InP/Fe/n configurations related to leakage current in buried heterostructure lasers with current blocking SI-InP:Fe
IN behaviour of p/Sl/n and p/n/SI/n configurations are studied and compared. These results are exploited to extract their contributions to leakage currents in two types of buried heterostructure lasers which use SI-InP:Fe as the current blocking layer.
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