延迟不敏感设计的新型接口电路的设计、实现和验证

Cheng-Hong Li, R. Collins, Sampada Sonalkar, L. Carloni
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引用次数: 28

摘要

随着纳米技术的到来,与栅极延迟相比,线延迟不再是可以忽略不计的,时间闭合成为片上系统设计人员面临的主要挑战。延迟不敏感设计(LID)被提出作为一种“按结构正确”的设计方法来解决这个问题。在本文中,我们提出了一种新型接口电路的设计和实现,以支持LID,与文献中提出的先前设计相比,该电路在有限的面积开销下提供了实质性的性能改进。这一说法得到了实验结果的支持,我们用90纳米工业标准电池库完成了这三种设计的半定制实现。我们还报告了我们设计的形式化验证:使用NuSMV模型检查器,我们验证了我们的LID接口电路(中继站和外壳)的RTL可合成实现是根据LID理论对相应抽象规范的正确改进。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design, Implementation, and Validation of a New Class of Interface Circuits for Latency-Insensitive Design
With the arrival of nanometer technologies wire delays are no longer negligible with respect to gate delays, and timing-closure becomes a major challenge to system-on-chip designers. Latency-insensitive design (LID) has been proposed as a "correct-by-construction" design methodology to cope with this problem. In this paper we present the design and implementation of a new class of interface circuits to support LID that offers substantial performance improvements with limited area overhead with respect to previous designs proposed in the literature. This claim is supported by the experimental results that we obtained completing semi-custom implementations of the three designs with a 90 nm industrial standard-cell library. We also report on the formal verification of our design: using the NuSMV model checker we verified that the RTL synthesizable implementations of our LID interface circuits (relay stations and shells) are correct refinements of the corresponding abstract specifications according to the theory of LID.
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