ESD reliability comparison of different layout topologies in the 0.25-μm 60-V nLDMOS power devices

The impact of layout-type dependences on anti-ESD robustness in a 0.25 μm 60 V process will be investigated in this paper, which included the traditional striped-type nLDMOS, waffle-type nLDMOS, and nLDMOS embedded with a pnp-manner SCR devices. Then, these nLDMOS devices are used to evaluate the influence of layout architecture on trigger voltage (Vt1), holding voltage (Vh) and secondary breakdown current (It2). Eventually, it can be found that how to sketch the layout pattern of an nLDMOS is a very important issue in the anti-ESD consideration. The waffle-type nLDMOS DUT is poor contribution to It2 robustness due to the non-uniform turned-on phenomenon and a narrow channel width per unit finger. Therefore, the It2 robustness of a waffle-type nLDMOS device is decreased about 17% as compared with a traditional striped-type (reference) nLDMOS device. The ESD abilities of traditional striped-type and waffle-type nLDMOS devices with an embedded SCR (pnp-manner arrangement in the drain side) are better than a traditional nLDMOS 224.4% in average. Noteworthy, the nLDMOS-SCR (pnp-manner arrangement) is a good structure for the anti-ESD reliability in high-voltage applications.