超深亚微米技术中的串扰噪声分析

M. Elgamel, K. Tharmalingam, M. Bayoumi
{"title":"超深亚微米技术中的串扰噪声分析","authors":"M. Elgamel, K. Tharmalingam, M. Bayoumi","doi":"10.1109/ISVLSI.2003.1183461","DOIUrl":null,"url":null,"abstract":"In ultra deep submicron (UDSM) circuit design, the interconnect delay and noise have become the dominant factors in determining circuit performance. Analytical expressions are preferred because simulation is always expensive and ineffective in use with modern designs containing millions of transistors and wires. However, analytical expressions are not sufficiently accurate and do not consider all of interconnect and driver parameters. In this paper, we analyze the effects of all known interconnect and driver parameters on the crosstalk peak noise, crosstalk noise pulse width, and the impact of coupling on aggressor delay. We consider parameters like spacing between wires, wire length, coupling length, load capacitance, rise time of the inputs, place of overlap (near driver or receiver side), frequency, direction of the signals, wire width for both the aggressors and the victim wires. Also, we consider parameters like driver strength as several recent studies considered the simultaneous device and interconnect sizing.","PeriodicalId":299309,"journal":{"name":"IEEE Computer Society Annual Symposium on VLSI, 2003. Proceedings.","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Crosstalk noise analysis in ultra deep submicrometer technologies\",\"authors\":\"M. Elgamel, K. Tharmalingam, M. Bayoumi\",\"doi\":\"10.1109/ISVLSI.2003.1183461\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In ultra deep submicron (UDSM) circuit design, the interconnect delay and noise have become the dominant factors in determining circuit performance. Analytical expressions are preferred because simulation is always expensive and ineffective in use with modern designs containing millions of transistors and wires. However, analytical expressions are not sufficiently accurate and do not consider all of interconnect and driver parameters. In this paper, we analyze the effects of all known interconnect and driver parameters on the crosstalk peak noise, crosstalk noise pulse width, and the impact of coupling on aggressor delay. We consider parameters like spacing between wires, wire length, coupling length, load capacitance, rise time of the inputs, place of overlap (near driver or receiver side), frequency, direction of the signals, wire width for both the aggressors and the victim wires. Also, we consider parameters like driver strength as several recent studies considered the simultaneous device and interconnect sizing.\",\"PeriodicalId\":299309,\"journal\":{\"name\":\"IEEE Computer Society Annual Symposium on VLSI, 2003. Proceedings.\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-02-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Computer Society Annual Symposium on VLSI, 2003. Proceedings.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISVLSI.2003.1183461\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Computer Society Annual Symposium on VLSI, 2003. Proceedings.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISVLSI.2003.1183461","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14

摘要

在超深亚微米(UDSM)电路设计中,互连延迟和噪声已成为决定电路性能的主要因素。解析表达式是首选,因为在包含数百万晶体管和电线的现代设计中,模拟总是昂贵且无效的。然而,解析表达式不够精确,并且没有考虑所有的互连和驱动器参数。在本文中,我们分析了所有已知的互连和驱动参数对串扰峰值噪声、串扰噪声脉冲宽度的影响,以及耦合对侵略者延迟的影响。我们考虑诸如导线间距、导线长度、耦合长度、负载电容、输入上升时间、重叠位置(靠近驱动器或接收器侧)、频率、信号方向、攻击线和受害线的线宽等参数。此外,我们还考虑了驱动器强度等参数,因为最近的几项研究考虑了同步设备和互连尺寸。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Crosstalk noise analysis in ultra deep submicrometer technologies
In ultra deep submicron (UDSM) circuit design, the interconnect delay and noise have become the dominant factors in determining circuit performance. Analytical expressions are preferred because simulation is always expensive and ineffective in use with modern designs containing millions of transistors and wires. However, analytical expressions are not sufficiently accurate and do not consider all of interconnect and driver parameters. In this paper, we analyze the effects of all known interconnect and driver parameters on the crosstalk peak noise, crosstalk noise pulse width, and the impact of coupling on aggressor delay. We consider parameters like spacing between wires, wire length, coupling length, load capacitance, rise time of the inputs, place of overlap (near driver or receiver side), frequency, direction of the signals, wire width for both the aggressors and the victim wires. Also, we consider parameters like driver strength as several recent studies considered the simultaneous device and interconnect sizing.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信