Jozef Reinerus Maria Bergervoet, H. Kundur, D. Leenaerts, R. V. D. Beek, Raf Roovers, G. V. D. Weide, H. Waite, S. Aggarwal
{"title":"一个完全集成的3波段OFDM UWB收发器在0.25/spl mu/m SiGe BiCMOS","authors":"Jozef Reinerus Maria Bergervoet, H. Kundur, D. Leenaerts, R. V. D. Beek, Raf Roovers, G. V. D. Weide, H. Waite, S. Aggarwal","doi":"10.1109/RFIC.2006.1651142","DOIUrl":null,"url":null,"abstract":"A fully integrated transceiver for 3-band OFDM UWB is presented. It has been implemented in a 0.25mum SiGe BiCMOS process, and has a die area of less than 4mm2. The power consumption is 47mA, 43mA, and 27mA at 2.7V supply for receiver, transmitter, and synthesizer respectively. The chip features DC offset cancellation, a loop-back test mode, a single input/output pin for antenna connection, a 1GHz baseband clock output and is robust against interferers from cellular and ISM bands. The measured EVM is 8%, while the overall NF is 4.5dB and the iIP3 is -6dBm","PeriodicalId":194071,"journal":{"name":"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A fully integrated 3-band OFDM UWB transceiver in 0.25/spl mu/m SiGe BiCMOS\",\"authors\":\"Jozef Reinerus Maria Bergervoet, H. Kundur, D. Leenaerts, R. V. D. Beek, Raf Roovers, G. V. D. Weide, H. Waite, S. Aggarwal\",\"doi\":\"10.1109/RFIC.2006.1651142\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully integrated transceiver for 3-band OFDM UWB is presented. It has been implemented in a 0.25mum SiGe BiCMOS process, and has a die area of less than 4mm2. The power consumption is 47mA, 43mA, and 27mA at 2.7V supply for receiver, transmitter, and synthesizer respectively. The chip features DC offset cancellation, a loop-back test mode, a single input/output pin for antenna connection, a 1GHz baseband clock output and is robust against interferers from cellular and ISM bands. The measured EVM is 8%, while the overall NF is 4.5dB and the iIP3 is -6dBm\",\"PeriodicalId\":194071,\"journal\":{\"name\":\"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2006.1651142\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2006.1651142","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A fully integrated 3-band OFDM UWB transceiver in 0.25/spl mu/m SiGe BiCMOS
A fully integrated transceiver for 3-band OFDM UWB is presented. It has been implemented in a 0.25mum SiGe BiCMOS process, and has a die area of less than 4mm2. The power consumption is 47mA, 43mA, and 27mA at 2.7V supply for receiver, transmitter, and synthesizer respectively. The chip features DC offset cancellation, a loop-back test mode, a single input/output pin for antenna connection, a 1GHz baseband clock output and is robust against interferers from cellular and ISM bands. The measured EVM is 8%, while the overall NF is 4.5dB and the iIP3 is -6dBm
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
