一种高度紧凑的1W ku波段功率放大器

B. Coquillas, E. Kerhervé, Anne-Charlotte Amiaud, L. Roussel, S. Redois, B. Louis, T. Merlet, V. Petit
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引用次数: 1

摘要

提出了一种高度紧凑的双平衡两级ku波段SiGe功率放大器。四个动力电池组合在一个平衡的结构中,占地面积不到2平方毫米。作为概念验证,功率放大器采用0.13 μm SiGe BiCMOS技术设计。在18GHz的模拟性能显示,在90°C时饱和功率高于30dBm,线性增益为21.2dB,峰值功率增加效率为26.5%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Highly Compact 1W Ku-Band Power Amplifier
This paper presents a highly compact double-balanced two-stage Ku-Band SiGe power amplifier. Four power cells are combined in a balanced architecture which occupies less than 2mm2. As a proof of concept, the power amplifier was designed with a 0.13-μm SiGe BiCMOS technology. The simulated performances at 18GHz exhibit a saturated power higher than 30dBm up to 90°C, a linear gain of 21.2dB and a peak power added efficiency of 26.5%.
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