B. Coquillas, E. Kerhervé, Anne-Charlotte Amiaud, L. Roussel, S. Redois, B. Louis, T. Merlet, V. Petit
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This paper presents a highly compact double-balanced two-stage Ku-Band SiGe power amplifier. Four power cells are combined in a balanced architecture which occupies less than 2mm2. As a proof of concept, the power amplifier was designed with a 0.13-μm SiGe BiCMOS technology. The simulated performances at 18GHz exhibit a saturated power higher than 30dBm up to 90°C, a linear gain of 21.2dB and a peak power added efficiency of 26.5%.