提高DRAM模块可靠性的锡膏中添加Bi和In元素的研究

Yun-Ting Hsu, Yu Zou, Yi-Yu Chen, Min-Hua Chung, C.L. Gan, Fatima Macalalad, Shriram Harihara Subramanian
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引用次数: 0

摘要

通过焊点强度、物理失效分析和模块可靠性试验,对添加Bi和In元素的锡膏进行了研究。双掺杂钎料合金的焊点强度高于SAC305和SnAgCu-In。在温度循环测试中,SnAgCu-In的热可靠性性能表现最好。添加Bi和未添加Bi的试样具有不同的裂纹模式:添加Bi的试样存在微量裂纹,未添加Bi的试样存在疲劳裂纹。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation of Bi and In Elemental Addition in Solder Paste for DRAM Module Reliability Enhancement
Solder pastes with Bi and In elemental additions were studied by solder joint strength, physical failure analysis, and module reliability tests in this work. Bi-doped solder alloys were found to have stronger solder joints than SAC305 and SnAgCu-In. During the temperature cycling test, SnAgCu-In appeared the best in thermal reliability performance. Samples with Bi and without Bi were observed with different crack modes: trace cracks were found in Bi-doped, and fatigue cracks existed in samples without Bi.
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