用于冷闪和千禧年存储器的1Xnm薄层色谱可靠性增强

2015 Symposium on VLSI Technology (VLSI Technology) Pub Date : 2015-06-16 DOI:10.1109/VLSIT.2015.7223642

Senju Yamazaki, S. Tanakamaru, Sakuya Suzuki, T. Iwasaki, Shogo Hachiya, K. Takeuchi

{"title":"用于冷闪和千禧年存储器的1Xnm薄层色谱可靠性增强","authors":"Senju Yamazaki, S. Tanakamaru, Sakuya Suzuki, T. Iwasaki, Shogo Hachiya, K. Takeuchi","doi":"10.1109/VLSIT.2015.7223642","DOIUrl":null,"url":null,"abstract":"Endurance and retention are measured in 1Xnm Triple Level Cell (TLC) NAND and the flexible nLC scheme (flex-nLC) is proposed to improve reliability. This method enables the use of lowest-cost TLC NAND as is, in long term storage applications such as cold flash and digital archive: millennium memory, which have 20 and 1000 years retention, respectively.","PeriodicalId":181654,"journal":{"name":"2015 Symposium on VLSI Technology (VLSI Technology)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Reliability enhancement of 1Xnm TLC for cold flash and millennium memories\",\"authors\":\"Senju Yamazaki, S. Tanakamaru, Sakuya Suzuki, T. Iwasaki, Shogo Hachiya, K. Takeuchi\",\"doi\":\"10.1109/VLSIT.2015.7223642\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Endurance and retention are measured in 1Xnm Triple Level Cell (TLC) NAND and the flexible nLC scheme (flex-nLC) is proposed to improve reliability. This method enables the use of lowest-cost TLC NAND as is, in long term storage applications such as cold flash and digital archive: millennium memory, which have 20 and 1000 years retention, respectively.\",\"PeriodicalId\":181654,\"journal\":{\"name\":\"2015 Symposium on VLSI Technology (VLSI Technology)\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 Symposium on VLSI Technology (VLSI Technology)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2015.7223642\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 Symposium on VLSI Technology (VLSI Technology)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2015.7223642","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

在1Xnm三层薄层(TLC) NAND中测量了持久度和保持度，并提出了柔性nLC方案(flex-nLC)来提高可靠性。这种方法使最低成本的TLC NAND能够在长期存储应用中使用，例如冷闪和数字存档:千禧年存储器，它们分别具有20年和1000年的保留时间。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Reliability enhancement of 1Xnm TLC for cold flash and millennium memories

Endurance and retention are measured in 1Xnm Triple Level Cell (TLC) NAND and the flexible nLC scheme (flex-nLC) is proposed to improve reliability. This method enables the use of lowest-cost TLC NAND as is, in long term storage applications such as cold flash and digital archive: millennium memory, which have 20 and 1000 years retention, respectively.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2015 Symposium on VLSI Technology (VLSI Technology)

自引率

0.00%

发文量