S、Fe和未掺杂InP的LP-HVPE生长

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI:10.1109/ICIPRM.1999.773650

D. Jahan, D. Soderstrom, S. Lourdudoss

{"title":"S、Fe和未掺杂InP的LP-HVPE生长","authors":"D. Jahan, D. Soderstrom, S. Lourdudoss","doi":"10.1109/ICIPRM.1999.773650","DOIUrl":null,"url":null,"abstract":"This study presents the result of low-pressure hydride vapour phase epitaxy of undoped and doped InP carried out in a commercial equipment designed for 3-inch wafers. Specially, InP:Fe growth with ferrocene has been investigated in order to provide high resistive semi-insulating material. Besides, a very good planarisation around mesas has been achieved by selective regrowth. Finally, to validate the equipment, Fabry-Perot lasers with a modulation bandwidth of 15 GHz have been realised by burying mesas with regrown InP:Fe.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"LP-HVPE growth of S, Fe and undoped InP\",\"authors\":\"D. Jahan, D. Soderstrom, S. Lourdudoss\",\"doi\":\"10.1109/ICIPRM.1999.773650\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study presents the result of low-pressure hydride vapour phase epitaxy of undoped and doped InP carried out in a commercial equipment designed for 3-inch wafers. Specially, InP:Fe growth with ferrocene has been investigated in order to provide high resistive semi-insulating material. Besides, a very good planarisation around mesas has been achieved by selective regrowth. Finally, to validate the equipment, Fabry-Perot lasers with a modulation bandwidth of 15 GHz have been realised by burying mesas with regrown InP:Fe.\",\"PeriodicalId\":213868,\"journal\":{\"name\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1999.773650\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773650","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

本研究介绍了在3英寸晶圆设计的商用设备上进行的未掺杂和掺杂InP的低压氢化物气相外延的结果。为了提供高阻半绝缘材料，研究了用二茂铁生长InP:Fe的方法。此外，通过选择性再生，在台地周围实现了很好的平面化。最后，为了验证该设备的有效性，利用再生InP:Fe埋置台面实现了调制带宽为15 GHz的Fabry-Perot激光器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

LP-HVPE growth of S, Fe and undoped InP

This study presents the result of low-pressure hydride vapour phase epitaxy of undoped and doped InP carried out in a commercial equipment designed for 3-inch wafers. Specially, InP:Fe growth with ferrocene has been investigated in order to provide high resistive semi-insulating material. Besides, a very good planarisation around mesas has been achieved by selective regrowth. Finally, to validate the equipment, Fabry-Perot lasers with a modulation bandwidth of 15 GHz have been realised by burying mesas with regrown InP:Fe.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)

自引率

0.00%

发文量