铜柱芯片的薄片成型和再分布沉积工艺发展

Ran Yin, Clara Pechnig, K. Nieweglowski, K. Meier, K. Bock
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引用次数: 2

摘要

3D包装解决方案的驱动因素不断增加。这项工作研究了一种新的互连技术,使用薄片成型工艺来实现包对包(PoP)堆叠。该技术以片状成型复合材料(SMC)为基础,适用于多层结构、薄型和大面积封装。在真空的辅助下,可以将多个单一的薄铜柱芯片嵌入到片模中,从而按照模具优先的方式实现面板级封装或晶圆级封装。本文通过不同铜柱间距和节距的实验,探讨了SMC取代传统环氧基模塑复合材料的可行性。在此基础上,对直径为200 $\mu {{\ mathm}}$、高度为40 $\mu {\ mathm}$的铜扣进行了剪切试验,以确定沉积层在SMC表面的粘附性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Process Developments on Sheet Molding and Redistribution Deposition for Cu-Pillar Chips
Drivers for 3D packaging solutions are increasing constantly. This work investigated a new interconnect technique using sheet molding process to enable Package-on-Package (PoP) stacking. This technique is based on sheet molding compound (SMC), which is suitable for multi-layer structures, thin and large area packaging. With the assist of vacuum, multiple singulated thinned Cu-pillar chips could be embedded in the sheet mold, to enable panel-level-packaging or wafer-level packaging following the mold-first approach. In this work, the feasibility of replacing the conventional epoxy-based molding compound (EMC) by SMC is investigated by experiments on different Cu-pillar standoffs and pitches. Furthermore, shear test of Cu buttons 200 $\mu {{\mathrm m}}$ in diameter and $40 \mu {\mathrm m}$ in height is carried out to determine the adhesion of the deposited layer on the SMC surface.
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