具有减少瞬态误差电荷的MOS通型晶体管

1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1986.1157005

J. Kuo, C. Fu, D. Dameron, R. Dutton, B. Wooley

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引用次数: 5

摘要

本文将描述用于MOS通路晶体管的双块模型，以表示关断瞬态误差电荷。对于圆形晶体管结构，这种误差将减少90%。

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MOS pass transistors with reduced transient error charge

A two-lump model, developed for MOS pass transistors, to represent the turnoff transient error charge, will be described. Reduction of this error by 90% will be cited for a circular transistor structure.

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来源期刊

1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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