采用CMOS技术的高耦合变压器

IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 Pub Date : 2006-06-11 DOI:10.1109/RFIC.2006.1651132

H. Hsu, Ming-Ming Hsieh, Chien-Wen Tseng, Kuo-Hsun Huang

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引用次数: 4

摘要

本研究提出了一种采用当前硅基技术的高耦合变压器。在保持变压器自感相同的情况下，讨论了不同的布局配置。此外，还提出了一种等效电路来研究器件的高频特性

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High coupling transformer in CMOS technology

This study proposes a high coupling transformer using current silicon-based technology. Maintaining identical self inductance of proposed transformer, the different layout configuration is discussed in this work. Moreover, an equivalent circuit is proposed to investigate the device behavior especially for high frequency

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来源期刊

IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006

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