半无源RFID标签的两级唤醒电路

2009 IEEE 8th International Conference on ASIC Pub Date : 2009-12-11 DOI:10.1109/ASICON.2009.5351345

Wei Chen, Wenyi Che, Xiao Wang, Chenling Huang, N. Yan, Hao Min, Jie Tan

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引用次数: 16

摘要

设计并实现了半无源射频识别(RFID)标签的两级唤醒电路。18µm CMOS技术。为了延长标签的电池寿命，提出了一种具有自校准功能的两阶段唤醒策略。测量结果表明，唤醒电路无静态功率，不受过程、电压和温度(PVT)变化的影响。

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A two-stage wake-up circuit for semi-passive RFID tag

A two-stage wake-up circuit for semi-passive Radio Frequency Identification (RFID) tag is designed and implemented in SMIC 0. 18 µm CMOS technology. In order to prolong the tag's battery life, a novel two-stage wake-up strategy with self-calibration is proposed. Measurement results show that the wake-up circuit has no static power and is free of Process, Voltage and Temperature (PVT) variations.

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来源期刊

2009 IEEE 8th International Conference on ASIC

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