研究光敏半导体薄膜张力灵敏度的装置

SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-02-28 DOI:10.37681/2181-1652-019-x-2021-1-5

Kh. S. Daliev, M. Onarkulov, S. Otajonov

{"title":"研究光敏半导体薄膜张力灵敏度的装置","authors":"Kh. S. Daliev, M. Onarkulov, S. Otajonov","doi":"10.37681/2181-1652-019-x-2021-1-5","DOIUrl":null,"url":null,"abstract":"A device has been developed for studying strain sensitivity in photosensitive wide- gap semiconductor thin films. The device allows the study o f strain sensitivity in photosensitive wide- gap semiconductor thin films when illuminated with natural and monochromatic light within the deformation range from -210-3 to 210-3 rel. At the same time, this device makes it possible to deform the same film repeatedly without destroying it","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"DEVICE FOR STUDYING TENZE SENSITIVITY IN PHOTOSENSITIVE SEMICONDUCTOR FILMS\",\"authors\":\"Kh. S. Daliev, M. Onarkulov, S. Otajonov\",\"doi\":\"10.37681/2181-1652-019-x-2021-1-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A device has been developed for studying strain sensitivity in photosensitive wide- gap semiconductor thin films. The device allows the study o f strain sensitivity in photosensitive wide- gap semiconductor thin films when illuminated with natural and monochromatic light within the deformation range from -210-3 to 210-3 rel. At the same time, this device makes it possible to deform the same film repeatedly without destroying it\",\"PeriodicalId\":153395,\"journal\":{\"name\":\"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-02-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.37681/2181-1652-019-x-2021-1-5\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.37681/2181-1652-019-x-2021-1-5","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研制了一种用于研究光敏宽间隙半导体薄膜应变灵敏度的装置。该装置可以研究光敏宽间隙半导体薄膜在自然光和单色光照射下在-210-3 ~ 210-3 rel变形范围内的应变灵敏度。同时，该装置使同一薄膜在不破坏的情况下反复变形成为可能

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

DEVICE FOR STUDYING TENZE SENSITIVITY IN PHOTOSENSITIVE SEMICONDUCTOR FILMS

A device has been developed for studying strain sensitivity in photosensitive wide- gap semiconductor thin films. The device allows the study o f strain sensitivity in photosensitive wide- gap semiconductor thin films when illuminated with natural and monochromatic light within the deformation range from -210-3 to 210-3 rel. At the same time, this device makes it possible to deform the same film repeatedly without destroying it

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS

自引率

0.00%

发文量