高速光接收机用130 nm CMOS和BiCMOS技术高灵敏度跨阻放大器的设计与优化

A. F. Ponchet, E. M. Bastida, R. Panepucci, J. Swart, C. Finardi
{"title":"高速光接收机用130 nm CMOS和BiCMOS技术高灵敏度跨阻放大器的设计与优化","authors":"A. F. Ponchet, E. M. Bastida, R. Panepucci, J. Swart, C. Finardi","doi":"10.1145/2800986.2801001","DOIUrl":null,"url":null,"abstract":"A set of low noise transimpedance amplifiers fabricated and characterized in CMOS and BiCMOS technologies are proposed in this work. Layout optimization, efficient modeling and bias point optimization are the techniques employed to reduce the input noise current density. The CMOS amplifiers were designed to work at 10 Gbps. The BiCMOS amplifiers, based on HBT transistors, can operate at bit rates higher than 25 Gbps. At our knowledge, the broadband amplifiers proposed in this work have the lowest input noise current density compared to other 130 nm designs.","PeriodicalId":325572,"journal":{"name":"2015 28th Symposium on Integrated Circuits and Systems Design (SBCCI)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Design and optimization of high sensitivity transimpedance amplifiers in 130 nm CMOS and BiCMOS technologies for high speed optical receivers\",\"authors\":\"A. F. Ponchet, E. M. Bastida, R. Panepucci, J. Swart, C. Finardi\",\"doi\":\"10.1145/2800986.2801001\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A set of low noise transimpedance amplifiers fabricated and characterized in CMOS and BiCMOS technologies are proposed in this work. Layout optimization, efficient modeling and bias point optimization are the techniques employed to reduce the input noise current density. The CMOS amplifiers were designed to work at 10 Gbps. The BiCMOS amplifiers, based on HBT transistors, can operate at bit rates higher than 25 Gbps. At our knowledge, the broadband amplifiers proposed in this work have the lowest input noise current density compared to other 130 nm designs.\",\"PeriodicalId\":325572,\"journal\":{\"name\":\"2015 28th Symposium on Integrated Circuits and Systems Design (SBCCI)\",\"volume\":\"111 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-08-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 28th Symposium on Integrated Circuits and Systems Design (SBCCI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/2800986.2801001\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 28th Symposium on Integrated Circuits and Systems Design (SBCCI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/2800986.2801001","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

本文提出了一套采用CMOS和BiCMOS技术制备和表征的低噪声跨阻放大器。优化布局、高效建模和优化偏置点是降低输入噪声电流密度的主要方法。CMOS放大器的工作速率为10gbps。基于HBT晶体管的BiCMOS放大器可以以高于25 Gbps的比特率工作。据我们所知,与其他130纳米设计相比,本研究提出的宽带放大器具有最低的输入噪声电流密度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and optimization of high sensitivity transimpedance amplifiers in 130 nm CMOS and BiCMOS technologies for high speed optical receivers
A set of low noise transimpedance amplifiers fabricated and characterized in CMOS and BiCMOS technologies are proposed in this work. Layout optimization, efficient modeling and bias point optimization are the techniques employed to reduce the input noise current density. The CMOS amplifiers were designed to work at 10 Gbps. The BiCMOS amplifiers, based on HBT transistors, can operate at bit rates higher than 25 Gbps. At our knowledge, the broadband amplifiers proposed in this work have the lowest input noise current density compared to other 130 nm designs.
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