A. F. Ponchet, E. M. Bastida, R. Panepucci, J. Swart, C. Finardi
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Design and optimization of high sensitivity transimpedance amplifiers in 130 nm CMOS and BiCMOS technologies for high speed optical receivers
A set of low noise transimpedance amplifiers fabricated and characterized in CMOS and BiCMOS technologies are proposed in this work. Layout optimization, efficient modeling and bias point optimization are the techniques employed to reduce the input noise current density. The CMOS amplifiers were designed to work at 10 Gbps. The BiCMOS amplifiers, based on HBT transistors, can operate at bit rates higher than 25 Gbps. At our knowledge, the broadband amplifiers proposed in this work have the lowest input noise current density compared to other 130 nm designs.