M. Caselli, I. Papistas, S. Cosemans, A. Mallik, P. Debacker, D. Verkest
{"title":"模拟内存计算中的电荷共享和电荷注入A/D转换器","authors":"M. Caselli, I. Papistas, S. Cosemans, A. Mallik, P. Debacker, D. Verkest","doi":"10.1109/NEWCAS50681.2021.9462775","DOIUrl":null,"url":null,"abstract":"This paper describes the design of two A/D converters, the Charge Sharing SAR and the Charge Injection SAR, in 22 nm FD SOI technology, for Analog-in-Memory computing in machine learning (ML) applications. The former architecture matches well SRAM-based Matrix-Vector Multipliers (MVM)s, whereas the latter is suitable for integration with SOT-MRAM-based arrays. Both ADCs show remarkable energy figures and area metrics, making the topologies suitable for integration at the periphery of MVM arrays.","PeriodicalId":373745,"journal":{"name":"2021 19th IEEE International New Circuits and Systems Conference (NEWCAS)","volume":"164 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Charge Sharing and Charge Injection A/D Converters for Analog In-Memory Computing\",\"authors\":\"M. Caselli, I. Papistas, S. Cosemans, A. Mallik, P. Debacker, D. Verkest\",\"doi\":\"10.1109/NEWCAS50681.2021.9462775\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the design of two A/D converters, the Charge Sharing SAR and the Charge Injection SAR, in 22 nm FD SOI technology, for Analog-in-Memory computing in machine learning (ML) applications. The former architecture matches well SRAM-based Matrix-Vector Multipliers (MVM)s, whereas the latter is suitable for integration with SOT-MRAM-based arrays. Both ADCs show remarkable energy figures and area metrics, making the topologies suitable for integration at the periphery of MVM arrays.\",\"PeriodicalId\":373745,\"journal\":{\"name\":\"2021 19th IEEE International New Circuits and Systems Conference (NEWCAS)\",\"volume\":\"164 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 19th IEEE International New Circuits and Systems Conference (NEWCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEWCAS50681.2021.9462775\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 19th IEEE International New Circuits and Systems Conference (NEWCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEWCAS50681.2021.9462775","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Charge Sharing and Charge Injection A/D Converters for Analog In-Memory Computing
This paper describes the design of two A/D converters, the Charge Sharing SAR and the Charge Injection SAR, in 22 nm FD SOI technology, for Analog-in-Memory computing in machine learning (ML) applications. The former architecture matches well SRAM-based Matrix-Vector Multipliers (MVM)s, whereas the latter is suitable for integration with SOT-MRAM-based arrays. Both ADCs show remarkable energy figures and area metrics, making the topologies suitable for integration at the periphery of MVM arrays.
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