In和Sb逆行通道掺杂下氩注入SOI mosfet的性能权衡

1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345) Pub Date : 1999-10-04 DOI:10.1109/SOI.1999.819867

X.-L. Xu, R. Widenhofer, Y. Yu, O. Zia, S. Pozder, D. Hall, M. Rashed, D. Chang, S. Jallepalli, D. Connelly, T. Van Gompel, M. Olivares, M. Mendicino, J. Candelaria, S. Veeraraghavan, D. Dow

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引用次数: 1

摘要

本文报道了采用铟(In)和锑(Sb)逆行通道掺杂和氩(Ar)植入的0.18 /spl mu/m SOI CMOS技术的高性能器件特性。实验结果表明，Ar植入的SOI器件明显抑制了浮体(FB)效应，降低了关断电流，改善了I/sub on/ I/sub off/特性，降低了漏极诱导势垒降低(DIBL)值。同时，Ar的存在导致亚阈值摆动(SS)增加，GIDL特性降低，电栅氧化层厚度增加。实验结果还表明，当器件栅极通道长度减小到0.15 /spl mu/m及以下时，Ar植入对PD SOI NMOS器件中FB效应的抑制作用较弱。

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Performance trade-offs of argon implanted SOI MOSFETs with In and Sb retrograde channel doping

We report high performance device characteristics of 0.18 /spl mu/m SOI CMOS technology with indium (In) and antimony (Sb) retrograde channel doping and argon (Ar) implant. Experimental results demonstrate significant suppression of floating body (FB) effects, reduced off-state current, improved I/sub on/-I/sub off/ characteristics, and reduced drain induced barrier lowering (DIBL) values for the Ar implanted SOI devices. At the same time, the presence of Ar leads to increased subthreshold swing (SS), degraded GIDL characteristics, and increased electrical gate oxide thickness. Experimental results also show that the Ar implant for suppression of FB effects in PD SOI NMOS devices is less significant as the device gate channel length reduces to 0.15 /spl mu/m and below.

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来源期刊

1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)

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