简单和低成本的测量测试装置，以确定射频，本LO和中频阻抗设计GaN场效应管阻性混频器

2019 IEEE 62nd International Midwest Symposium on Circuits and Systems (MWSCAS) Pub Date : 2019-08-01 DOI:10.1109/MWSCAS.2019.8884891

C. Pérez‐Wences, J. R. Loo-Yau, P. Moreno

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引用次数: 1

摘要

本文讨论了一种简单、低成本的测试装置，能够测量设计场效应管阻性混频器所需的阻抗。该方法采用外部信号发生器和单端口s参数测量以及信号流理论来确定RF、LO和IF频率上的阻抗。采用封装的GaN场效应管设计了一种高线性场效应管阻性混频器，可将2.4 GHz LTE信号下转换为0.1 GHz中频信号，实验结果表明，转换损耗为6.9 dB, ACLR优于45 dBc。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Simple and Low-Cost Measurement Test Setup to Determine the RF, LO and IF Impedances for Designing GaN FET Resistive Mixer

This paper deals with a simple and low-cost test setup capable to measure the impedances needed for designing a FET resistive mixer. The proposed method uses an external signal generator along with one port S-parameters measurement and signal flow theory to determine the impedances at the RF, LO and IF frequencies. A packaged GaN FET is used to design a high linearity FET resistive mixer suitable to down-convert a 2.4 GHz LTE signal to a 0.1 GHz IF signal and the experimental results show a conversion loss of 6.9 dB and ACLR better than 45 dBc.

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2019 IEEE 62nd International Midwest Symposium on Circuits and Systems (MWSCAS)

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