采用新型峰值检测电路的低功耗2.5 gb /s CMOS突发模式跨阻放大器，具有快速响应时间

2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS) Pub Date : 2015-12-01 DOI:10.1109/ICECS.2015.7440289

Young-Ho Kim, Eunok Kim, Wonjong Kim

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引用次数: 0

摘要

设计了一种具有峰值检测电路的2.5 Gb/s CMOS突发模式跨阻放大器(BM-TIA)。所提出的峰值检测电路快速改变了BM-TIA的增益方式，从而提高了PON系统的低功耗数据传输能力。为了获得快速的响应时间，设计了RC-LPF、RC-LPF放大器和RC-LPF放大器的复制电路。该BM-TIA采用1P6M 0.18 μm CMOS工艺制备。对于2.5 Gb/s的突发前置输入，所设计的IC具有11 nsec的快速响应。在这种情况下，该4通道芯片从1.8 V电源消耗195.4 mW。在高增益模式下，BM-TIA的增益为66 dBΩ，带宽为2.45 GHz，眼抖动(rms)为4.243 ps。

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Low power 2.5-Gb/s CMOS burst-mode transimpedance amplifier with fast response time using a novel peak detection circuit

A 2.5 Gb/s CMOS burst-mode transimpedance amplifier (BM-TIA) with a novel peak detection circuit is designed in this paper. The proposed peak detection circuit changes quickly the gain mode of the BM-TIA and then improves the data transmission capacity of the PON system with low power consumption. In order to obtain quick response time of the BM-TIA, a RC-LPF, an amplifier followed it and a replica circuit of the amplifier are built in. This BM-TIA was fabricated in 1P6M 0.18 μm CMOS process. The designed IC exhibits a quick response of 11 nsec for a 2.5 Gb/s burst preamble input. In this condition, this chip of 4 channel consumes 195.4 mW from a 1.8 V supply. In high gain mode, the BM-TIA achieves a gain of 66 dBΩ with 2.45 GHz bandwidth and the eye jitter (rms) of 4.243 ps.

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2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)

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