S.O. Hong, T. Wetteroth, H. Shin, S. Wilson, W.M. Huang, J. Foerstner, M. Racanelli, H. Shin, B. Hwang, D. Schroder
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The quality of gate oxides on Thin-Film-Silicon-On-Insulator (TFSOI) substrates is essential for the development of TFSOI technologies. Compared with the extensive work on device characterization and circuit performance, however, data in this area are still limited. This paper presents a gate oxide integrity (GOI) study on both SIMOX (Separation-by-IMplantation-of-OXygen) and BESOI (Bonded-Etched-back-SOI) substrates. The effect of wafer polishing to reduce the initial surface micro-roughness is also discussed.
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