ZZ-HVS:锯齿形水平和垂直睡眠晶体管共享,以减少片上SRAM外围电路的泄漏功率

H. Homayoun, Avesta Sasan, A. Veidenbaum
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引用次数: 20

摘要

根据最近的研究,外围电路(包括解码器、字行驱动、输入和输出驱动)构成了缓存泄漏的很大一部分。此外,随着技术向更小的几何形状迁移,泄漏对总功耗的贡献比动态功率增长得更快,从而使泄漏成为最大的功耗因素。本文提出了一种减少SRAM外设漏损的锯齿形共享电路技术。利用锯齿形共享的体系结构控制,提出了一种集成的睡眠共享技术,并将其应用于L1和L2缓存中。结果表明,在深度流水线SRAM外围电路中,泄漏减少高达40倍,只有4%的面积开销和很小的额外延迟。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
ZZ-HVS: Zig-zag horizontal and vertical sleep transistor sharing to reduce leakage power in on-chip SRAM peripheral circuits
Based on Recent studies peripheral circuit (including decoders, wordline drivers, input and output drivers) constitutes a large portion of the cache leakage. In addition as technology migrate to smaller geometries, leakage contribution to total power consumption increases faster than dynamic power, promoting leakage as the largest power consumption factor. This paper proposes zig-zag share, a circuit technique to reduce leakage in SRAM peripheral. Using architectural control of zig-zag share, an integrated technique called Sleep-Share is proposed and applied in L1 and L2 caches. The results show leakage reduction by up to 40X in deeply pipelined SRAM peripheral circuits, with only a 4% area overhead and small additional delay.
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