{"title":"1200V FS-IGBT模块,增强动态夹紧能力","authors":"M. Otsuki, Y. Onozawa, S. Yoshiwatari, Y. Seki","doi":"10.1109/WCT.2004.240147","DOIUrl":null,"url":null,"abstract":"This paper describes the design concept to realize IGBT modules with large surge capability without any protection, such as gate controlled soft-turn-off and/or gate clamping zeners, especially focused on the large capacity fast switching FS (field-stop) IGBT modules. A 1200 V 450 A trench FS-IGBT module, which is designed to have optimum clamping voltage, has been able to obtain 6 /spl mu/sec-long UIS clamping turn off capability from two times larger current than its rating. Furthermore, the device survived after a 10 /spl mu/sec short-circuit followed by 2.5 /spl mu/sec clamping.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":"{\"title\":\"1200V FS-IGBT module with enhanced dynamic clamping capability\",\"authors\":\"M. Otsuki, Y. Onozawa, S. Yoshiwatari, Y. Seki\",\"doi\":\"10.1109/WCT.2004.240147\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the design concept to realize IGBT modules with large surge capability without any protection, such as gate controlled soft-turn-off and/or gate clamping zeners, especially focused on the large capacity fast switching FS (field-stop) IGBT modules. A 1200 V 450 A trench FS-IGBT module, which is designed to have optimum clamping voltage, has been able to obtain 6 /spl mu/sec-long UIS clamping turn off capability from two times larger current than its rating. Furthermore, the device survived after a 10 /spl mu/sec short-circuit followed by 2.5 /spl mu/sec clamping.\",\"PeriodicalId\":303825,\"journal\":{\"name\":\"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-05-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"26\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WCT.2004.240147\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WCT.2004.240147","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 26
摘要
本文介绍了实现无任何保护的具有大浪涌能力的IGBT模块的设计思想,如门控软关断和/或门箝位开关,重点介绍了大容量快速开关FS(场停止)IGBT模块。一个1200 V 450 A的沟槽FS-IGBT模块,其设计具有最佳的箝位电压,已经能够在比其额定电流大两倍的情况下获得6 /spl mu/秒长的美国箝位关断能力。此外,在10 /spl mu/秒的短路和2.5 /spl mu/秒的箝位后,器件存活。
1200V FS-IGBT module with enhanced dynamic clamping capability
This paper describes the design concept to realize IGBT modules with large surge capability without any protection, such as gate controlled soft-turn-off and/or gate clamping zeners, especially focused on the large capacity fast switching FS (field-stop) IGBT modules. A 1200 V 450 A trench FS-IGBT module, which is designed to have optimum clamping voltage, has been able to obtain 6 /spl mu/sec-long UIS clamping turn off capability from two times larger current than its rating. Furthermore, the device survived after a 10 /spl mu/sec short-circuit followed by 2.5 /spl mu/sec clamping.