基于可重构逻辑单元的双极双栅cntfet

K. Jabeur, I. O’Connor, S. L. Beux, D. Navarro
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引用次数: 3

摘要

本文介绍了利用双栅(DG)碳纳米管(CNT)场效应管的双极性特性,设计用于在纳米系统中执行可重构操作的2输入电池。先前的工作[12]描述了一个动态逻辑单元,仅生成14个功能,而不是通常由FPGA的CLB(可配置逻辑块)的基于多路复用器的逻辑部分执行的16个功能。本文利用DG-CNTFET器件设计了一个可重构的2输入动态逻辑单元,利用乘积和(SOP)和乘积(POS)来表达逻辑功能,实现了更完整的功能集合。我们还演示了静态逻辑版本可以从这个动态单元中派生出来。仿真结果表明,与之前的工作相比,延迟提高了3倍,功耗降低了23%[12]。与16nm-CMOS技术相比,DG-CNTFET单元(动态逻辑和静态逻辑风格)显示出相当的PDP,面积略有增加。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ambipolar double gate CNTFETs based reconfigurable Logic cells
This paper presents 2-input cells designed to perform reconfigurable operations in nanometric systems exploiting the ambipolar property of double-gate (DG) carbon nanotube (CNT) FETs. Previous work [12] described a dynamic logic cell generating only 14 functions instead of 16 normally performed by the multiplexer-based logic part of a CLB (Configurable Logic Block) of an FPGA for 2-inputs. In this work, a reconfigurable 2-input dynamic logic cell designed using DG-CNTFET devices is able to achieve a more complete set of functions by exploiting sum of products (SOP) and product of sums (POS) to express logic functions. We also demonstrated that a static logic version can be derived from this dynamic cell. Simulations reveal improvement factor of 3X in terms of delay and 23% of decrease in power consumption compared with the previous work [12]. When compared with 16nm-CMOS Technology, DG-CNTFET cells (dynamic logic and static logic style) showed a comparable PDP with a slight increase in area.
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