具有门控二极管的3晶体管DRAM单元，可提高速度和保持时间

2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers. Pub Date : 2006-06-15 DOI:10.1109/VLSIC.2006.1705371

W. Luk, Jin Cai, R. Dennard, M. Immediato, S. Kosonocky

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引用次数: 78

摘要

3T1D是一种非破坏性读取DRAM单元，具有三个晶体管(T)和一个门控二极管(D)。门控二极管作为存储器件和放大器，具有低电压、高速度和高可变性容忍度，与传统的3T增益单元和6T SRAM单元相比具有优势。在90 nm SOI中进行的硬件测量表明，3T1D比3T保持时间更长。提出了未来技术的保留、速度和扩展前景

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A 3-Transistor DRAM Cell with Gated Diode for Enhanced Speed and Retention Time

3T1D is a non-destructive read DRAM cell with three transistors (T) and a gated diode (D). The gated diode acts as a storage device and an amplifier, leading to low voltage, high speed and high tolerance to variability, and comparing favorably to conventional 3T gain cell and 6T SRAM cell. Hardware measurements in 90 nm SOI showed the 3T1D achieved longer retention than the 3T. Retention, speed and scaling perspectives for future technology are presented

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2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.

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