外延锗锡合金的热化学气相沉积

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2012-06-04 DOI:10.1109/ISTDM.2014.6874699

Y. Kim, Yi-Chiau Huang, E. Sanchez, S. Chu

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引用次数: 1

摘要

[Sn]达到16 at的GeSn外延膜的假晶生长。在减压热化学气相沉积室中对松弛Ge衬底进行了验证。原位硼掺杂后的GeSn膜电阻率可低至0.3 mOhm-cm。同时，生长了一种含有[Si]~24 at的GeSiSn薄膜。%和[Sn]~4 at。%是通过在GeSn生长过程中流动SiH4获得的。

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Thermal chemical vapor deposition of epitaxial germanium tin alloys

A pseudomorphic growth of GeSn epitaxial films with [Sn] up to 16 at.% on relaxed Ge underlayer was demonstrated in a reduced pressure thermal chemical vapor deposition chamber. GeSn film resistivity can be as low as 0.3 mOhm-cm by in-situ boron doping of GeSn. Also, a GeSiSn film growth containing [Si]~24 at.% and [Sn]~4 at.% was achieved by flowing SiH4 during GeSn growth.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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