能量注入对集成硅双极低噪声放大器无源元件损伤的影响

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI:10.1109/IPFA.2009.5232621

C. Chai, Yang Yang, Bing Zhang, R. Ding, Peng Leng, Xingrong Ren

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引用次数: 1

摘要

实验研究了硅双极低噪声放大器(LNA)通过注入特殊信号的能量注入效应及其机理。实验结果表明，除有源器件外，无源电阻也是硅LNAs的弱点之一。基于LNA的低噪声设计原则，宽的无源电阻设计不仅可以降低噪声，而且可以尽可能提高LNA的可靠性。实验结果表明，除了增益特性外，硅双极LNA的噪声系数也是能量注入的敏感参数之一。

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The effect of passive component damage of an integrated si bipolar low-noise amplifier under energy-injection

Energy injection effect and mechanism of silicon bipolar low noise amplifier (LNA) through the injection of a special signal are experimentally studied in this paper. The experimental results show that the passive resistor is also one of the weaknesses of silicon LNAs in addition to the active device. Based on the low noise design rule of LNA, a wider passive resistor design is particularly useful not only in reducing the noise but also in improving the reliability of LNA whenever possible. Except for the gain characteristics, the experimental results indicate that the noise figure of silicon bipolar LNA is also one of the sensitive parameters to energy injection.

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2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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