新型低k SiOC (k=2.4)具有优越的直接抛光和灰化耐受性，用于先进的BEOL集成

2009 IEEE International Interconnect Technology Conference Pub Date : 2009-06-01 DOI:10.1109/IITC.2009.5090373

N. Asami, T. Owada, S. Akiyama, N. Ohara, Y. Iba, T. Kouno, H. Kudo, S. Takesako, T. Osada, T. Kirimura, H. Watatani, A. Uedono, Y. Nara, M. Kase

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引用次数: 1

摘要

我们建立了具有更高工艺损伤容限的新型SiOC (k=2.4)。用有机硅烷和乙炔键作为等离子体增强化学气相沉积(PECVD)的前驱体沉积SiOC。前驱体在SiOC中含有高浓度的碳，并且SiOC自沉积以来具有封闭的孔隙，因此实现了较低的灰化和直接抛光铜的破坏。我们使用直接抛光来制造铜线。我们证实了灰化和直接抛光后SiOC的介电常数没有增加，保持在k=2.4。

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Novel low-k SiOC (k=2.4) with superior tolerance to direct polish and ashing for advanced BEOL integration

We established novel SiOC (k=2.4) with higher process damage tolerance. The SiOC was deposited using organo-silane with acetylene bond as a precursor of plasma enhanced chemical vapor deposition (PECVD). The precursor takes high concentration of carbon in the SiOC and the SiOC has closed pores since deposited without using any porogens, therefore lower damage by ashing and direct Cu polish are achieved. We fabricated Cu wirings using direct polish. We confirmed that dielectric constant of the SiOC did not increase after ashing and direct polish process and maintained k=2.4.

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2009 IEEE International Interconnect Technology Conference

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