一种超低电压超低功率忆阻器

S. Yener, A. Uygur, H. Kuntman
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引用次数: 2

摘要

忆阻器可以为非线性和混沌电路的设计提供新的途径。由于到目前为止还没有商用的忆阻器,因此从实际电路设计的角度来看,获得一个具有忆阻器性能的实际实现是非常重要的。本文提出了一种基于超低电压、超低功耗dtmos的忆阻器设计方案。并提出了一种新型的超低电压、超低功耗运算放大器和一种新型的超低电压、超低功耗乘法器。我们的设计是由这两种类型的有源模块组成,采用CMOS 0.18μm工艺技术,对称±0.25V电源电压。通过PSPICE仿真验证了设计的特点和性能。所提出的忆阻器的总功耗仅为4.3μW,适用于超低功耗。仿真结果表明,我们的设计能够准确地提供忆阻器的特性,特别是在基于低电压低功率忆阻器的混沌应用中,是一种可行的、方便的选择。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An ultra low-voltage ultra low-power memristor
Memristor can provide new approaches especially in nonlinear & chaotic circuit design. Since no commercially available memristor exist until yet, obtaining of a practical implementation which behaves as a memristor, is very important from the point of view real-world circuit design. In this work, an ultra low-voltage ultra low-power DTMOS-based design of memristor is presented. A new ultra low-voltage, ultra low-power operational amplifier and a new ultra low-voltage, ultra low-power multiplier are also proposed to use in the realization. Our design is composed of these two type active blocks using CMOS 0.18μm process technology with symmetric ±0.25V supply voltages. Characteristics and performance of our design is verified by PSPICE simulations. Total power consumption of the proposed memristor is found as just 4.3μW which is suitable for ultra low-power consumption. The simulation results show that our design provides the characteristics of memristor accurately and it could be a viable and convenient option especially in low-voltage low-power memristor based chaotic applications.
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