测定单晶硅空位和空穴含量的新方法

F. Spaepen
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引用次数: 3

摘要

只提供摘要形式。我们目前对纯硅中点缺陷浓度和原子输运的理解将被回顾,重点是随着温度降低而失去平衡。本文将对硅中“快”杂质的扩散和捕获进行综述。在低温下,可能被困在空位和内表面的杂质的间隙扩散为表征晶格缺陷提供了新的机会。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
New methods for determining the vacancy and void content of single crystal silicon
Summary form only given. Our present understanding of the point defect concentration and atomic transport in pure silicon will be reviewed, with the emphasis on the loss of equilibrium as the temperature is lowered. Diffusion and trapping of "fast" impurities in silicon will be reviewed. Interstitial in- and out-diffusion at low temperature of impurities that may be trapped at vacancies and internal surfaces provides new opportunities for characterizing lattice defects.
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