晶格匹配InGaAs/InAlAs/InP调制掺杂场效应晶体管的植入隔离实现

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492046

H. Fourre, O. Schuler, J. Pesant, A. Leroy, A. Cappy

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引用次数: 2

摘要

我们研究了晶格匹配InGaAs/InAlAs/InP调制掺杂场效应晶体管(modfet)的植入隔离。测定了不同离子注入(H/sup +/、B/sup +/、F/sup +/和Ar/sup +/)、不同离子剂量(10/sup 12/-10/sup 15/ cm/sup -2/)和不同退火时间(10 min-24 H)注入后(100/spl°C-400/spl°C) MODFET层的片电阻。使用Ar/sup +/注入，剂量为1.10/sup 15/ cm/sup -2/， 300/spl°C退火10小时，测得的片电阻约为30 M/spl Omega///spl square/。这是目前所知的InP晶格匹配MODFET层的最佳植体隔离结果。这一结果使我们能够实现具有良好隔离度的平面InP晶格匹配MODFET。

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Implant isolation for lattice matched InGaAs/InAlAs/InP modulation doped field effect transistor realisation

We have investigated implant isolation for lattice matched InGaAs/InAlAs/InP Modulation Doped Field Effect Transistors (MODFETs). The sheet resistances of the MODFET layers were measured after implantation of different ions species (H/sup +/, B/sup +/, F/sup +/ and Ar/sup +/), for different ion doses (10/sup 12/-10/sup 15/ cm/sup -2/) and after post implant annealing (100/spl deg/C-400/spl deg/C) for different annealing time (10 min-24 h). The best measured sheet resistance was about 30 M/spl Omega///spl square/ using Ar/sup +/ implantation with a dose of 1.10/sup 15/ cm/sup -2/ and 10 hours annealing at 300/spl deg/C. This is the best implant isolation result obtained for InP lattice matched MODFET layer to our knowledge. This result allows us to realise planar InP lattice matched MODFET with a good isolation.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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