具有体偏置补偿的亚阈值CMOS电压基准电路

Hao Luo, Yan Han, R. Cheung, G. Liang, Dazhong Zhu
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引用次数: 26

摘要

本文提出了一种亚阈值互补金属氧化物半导体(CMOS)电压参考电路,该电路采用动态体偏置来补偿与工艺相关的参考电压波动。该电路在电源为1.2 V、温度为27℃时产生的平均参考电压为0.781 V,将参考电压的标准差(σ)从11 mV降低到仅3 mV,同时将电源抑制比从-30.7提高到-51.4 dB。在0 ~ 100℃范围内测得的平均温度系数为48 ppm/℃,在1.2 ~ 2.3 V的电源电压范围内,线路稳压为0.34%/V。采用0.13-μm CMOS工艺,在1.2 V、100℃条件下最大供电电流为8.1 μA,芯片面积为0.0533 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Subthreshold CMOS voltage reference circuit with body bias compensation for process variation
This study presents a subthreshold complementary metal oxide semiconductor (CMOS) voltage reference circuit that adopts dynamical body bias to compensate the process-related reference voltage fluctuation. The proposed circuit generates a mean reference voltage of 0.781 V at 1.2 V supply and 27°C, reduces the standard deviation (σ) of the reference voltage from 11 mV to only 3 mV, and meanwhile improves the power supply rejection ratio from -30.7 to -51.4 dB. The average temperature coefficient measured from 0 to 100°C is 48 ppm/°C, and the line regulation is 0.34%/V in a supply voltage ranging from 1.2 to 2.3 V. The maximum supply current is 8.1 μA at 1.2 V supply and 100°C, and the chip area is 0.0533 mm 2 in 0.13-μm CMOS technology.
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