采用i线光刻技术制备的离子注入wn0.25 /spl μ m栅极MESFET，应用于MMIC和数字集成电路

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI:10.1109/GAAS.1995.528969

E. Oh, Jeon-Wook Yang, Chul-Soon Park, K. Pyun

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引用次数: 0

摘要

基于直接离子注入和双曝光i线光刻技术的0.25 /spl μ m栅极MESFET工艺已经生产出了高性能MESFET。最大跨导为600 mS/mm, k因子为450 mS/ Vmm。在不消除寄生效应的情况下，实现了高达65 GHz的截止频率。在12 GHz时，MESFET的最小噪声系数为0.87 dB，相关增益为9.97 dB。

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Ion-implanted WN 0.25 /spl mu/m gate MESFET fabricated using i-line photolithography for application to MMIC and digital IC

Straightforward WN 0.25 /spl mu/m gate MESFET process based on direct ion-implantation and i-line photolithography with double exposure process has produced high performance MESFETs. The maximum transconductance of 600 mS/mm and the k-factor of 450 ms/Vmm were obtained. As high as 65 GHz of cut-off frequency has been realized without any deembedding of parasitic effects. The MESFET shows the minimum noise figure of 0.87 dB and the associated gain of 9.97 dB at 12 GHz.

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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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