{"title":"架子上的硅","authors":"C. Edwards","doi":"10.1049/ESS:20060207","DOIUrl":null,"url":null,"abstract":"In the latest processes, it is normal for silicon to be stretched, strained and compressed as process engineers use ever more exotic ways of bending the silicon lattice to get more electron mobility out of transistors. This work could eventually lead to a new generation of hybrid devices that see silicon pushed out of the way altogether.","PeriodicalId":132835,"journal":{"name":"Electronic Systems and Software","volume":"118 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Silicon on the rack\",\"authors\":\"C. Edwards\",\"doi\":\"10.1049/ESS:20060207\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the latest processes, it is normal for silicon to be stretched, strained and compressed as process engineers use ever more exotic ways of bending the silicon lattice to get more electron mobility out of transistors. This work could eventually lead to a new generation of hybrid devices that see silicon pushed out of the way altogether.\",\"PeriodicalId\":132835,\"journal\":{\"name\":\"Electronic Systems and Software\",\"volume\":\"118 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electronic Systems and Software\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/ESS:20060207\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronic Systems and Software","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/ESS:20060207","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In the latest processes, it is normal for silicon to be stretched, strained and compressed as process engineers use ever more exotic ways of bending the silicon lattice to get more electron mobility out of transistors. This work could eventually lead to a new generation of hybrid devices that see silicon pushed out of the way altogether.
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