EUV 7nm FinFET SRAM倒装封装的背面辐照测试

2020 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2020-04-01 DOI:10.1109/IRPS45951.2020.9129331

T. Uemura, Byungjin Chung, J. Jo, Hai Jiang, Yongsung Ji, T. Jeong, R. Ranjan, Seungbae Lee, H. Rhee, S. Pae, Euncheol Lee, Jaehee Choi, Shotaro Ohnishi, Ken Machida

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引用次数: 2

摘要

本文提出了一种在倒装封装中进行α辐照测试的替代方法，即EUV 7nm FinFET SRAM的背面辐照测试。背面测试是在背面接地倒装芯片中进行的。测量了试样厚度，通过蒙特卡罗模拟计算了相关系数。前后侧试验结果表明了该方法的可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Backside Alpha-Irradiation Test in Flip-Chip Package in EUV 7 nm FinFET SRAM

This paper proposes an alternative method of alpha-irradiation test in flip-chip packages, backside irradiation test in EUV 7nm FinFET SRAM. The backside-test is conducted in backside-ground flip-chips. The sample thickness is measured, and the correlation factor is calculated by Monte-Carlo simulations. The results of backside- and front-side-tests show the dependability of the proposed method.

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2020 IEEE International Reliability Physics Symposium (IRPS)

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