集成2.4GHz CMOS F类功率放大器

H. Zhe, A. bin A'ain, A. Kordesch
{"title":"集成2.4GHz CMOS F类功率放大器","authors":"H. Zhe, A. bin A'ain, A. Kordesch","doi":"10.1109/SMELEC.2006.380688","DOIUrl":null,"url":null,"abstract":"This work will explore the integration of a class-F power amplifier using CMOS technology. At 2.4 GHz, the fully integrated on-chip CMOS power amplifier can deliver 21.8 dBm output power with 43.95% efficiency. The design makes use of the C18 RF models provided by Silterra and design of spiral inductor using commercial synthesis software.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"An Integrated 2.4GHz CMOS Class F Power Amplifier\",\"authors\":\"H. Zhe, A. bin A'ain, A. Kordesch\",\"doi\":\"10.1109/SMELEC.2006.380688\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work will explore the integration of a class-F power amplifier using CMOS technology. At 2.4 GHz, the fully integrated on-chip CMOS power amplifier can deliver 21.8 dBm output power with 43.95% efficiency. The design makes use of the C18 RF models provided by Silterra and design of spiral inductor using commercial synthesis software.\",\"PeriodicalId\":136703,\"journal\":{\"name\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2006.380688\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2006.380688","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

本工作将探索利用CMOS技术集成f类功率放大器。在2.4 GHz时,完全集成的片上CMOS功率放大器输出功率为21.8 dBm,效率为43.95%。本设计利用Silterra公司提供的C18射频模型,利用商业合成软件设计螺旋电感。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An Integrated 2.4GHz CMOS Class F Power Amplifier
This work will explore the integration of a class-F power amplifier using CMOS technology. At 2.4 GHz, the fully integrated on-chip CMOS power amplifier can deliver 21.8 dBm output power with 43.95% efficiency. The design makes use of the C18 RF models provided by Silterra and design of spiral inductor using commercial synthesis software.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信